SK 50 GD 066 ET的供应商，SK 50 GD 066 ET规格参数，SK 50 GD 066 ET的PDF资料

SK 50 GD 066 ET /IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS

SK 50 GD 066 ET的规格信息

图像仅供参考，请参阅规格书

Collector Current60 A

Collector to Emitter Shorted Voltage600 V

Collector to Emitter Voltage600 V

ConfigurationArray

Dimensions55 x 31 x 12 mm

Energy Rating3.1 mJ

Gate Capacitance3.1 nF

Gate to Emitter Voltage±20 V

Height0.472" (12mm)

Length2.165" (55mm)

Maximum Operating Temperature+175 °C

Minimum Operating Temperature-40 °C

Mounting TypeThrough Hole

Number of Pins19

Package TypeT-52

PolarityN-Channel

Primary TypeSi

Product HeaderN-Channel IGBT Module

SeriesIGBT Series

Temperature Operating Range-40 to +175 °C

Transistor TypeIGBT

TypeTrench

Width1.22" (31mm)

SK 50 GD 066 ET的供应商,可免费索样

SK 50 GD 066 ET及相关型号的PDF资料

型号	功能描述	生产厂商	厂商LOGO	PDF大小	PDF页数	下载地址	相关型号
SK 50 GD 066 ET	IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS	SEMIKRON		710.75 Kbytes	共3页		无

SK 50 GD 066 ET的全球分销商及价格

销售商	型号	制造商	功能描述	价格
Allied Electronics	SK 50 GD 066 ET	SEMIKRON	IGBT Half-Bridge Ultrafast, 1200V, SEMITRANS	+1:$114.33 +10:$112.05 +150:$108.62 +450:$104.05

SK 50 GD 066 ET的相关型号